{"@context":"http://iiif.io/api/presentation/2/context.json","@type":"sc:Manifest","@id":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/manifest","label":"High-gain lateral pnp bipolar transistors made using focused ion","metadata":[{"label":"Title","value":"High‐gain lateral pnp bipolar transistors made using focused ion beam implantation"},{"label":"Collection","value":["Physics Faculty Publications"]},{"label":"Relation","value":"phy"},{"label":"Author","value":"William M. Clark, Mark Utlaut, Robert H. Reuss, Dan Koury"},{"label":"Journal Title","value":"Journal of Vacuum Science and Technology B"},{"label":"Abstract","value":"We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base, respectively. The implants of B+, P+, and P+ + were all at a dose of 1×1013 /cm2 and a beam voltage of 75 kV. These implants defined spaces between the emitter and collector regions of 0.5–1.50 μm; which, after diffusion and zero voltage depletion width effects were considered, produced effective on‐wafer device basewidths of ∼0.2 μm. For the best devices, values of hFE near 100 were obtained with good junction characteristics and at peak collector currents of 10 μA/μm of device width."},{"label":"DOI","value":"10.1116/1.584336"},{"label":"Volume","value":"6"},{"label":"Issue","value":"3"},{"label":"Publication Date","value":"D:00 M:00 Y:1988"},{"label":"Publication Information","value":"Copyright 1998 American Vacuum Society. The original published version of this article may be found at http://dx.doi.org/10.1116/1.584336."}],"description":"High‐gain lateral pnp bipolar transistors made using focused ion beam implantation","sequences":[{"@type":"sc:Sequence","canvases":[{"@id":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_1","@type":"sc:Canvas","label":"High-gain lateral pnp bipolar transistors made using focused ion-2","height":1651,"width":1152,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://iiif.quartexcollections.com/portland/iiif/f2b6c8cb-1ee8-44e0-9ee4-82405f7827a4/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://iiif.quartexcollections.com/portland/iiif/f2b6c8cb-1ee8-44e0-9ee4-82405f7827a4","profile":"http://iiif.io/api/image/2/level2.json","tiles":[{"width":512,"scaleFactors":[1,2,4]}]},"height":1651,"width":1152},"on":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_1","metadata":[]}],"thumbnail":{"@id":"https://iiif.quartexcollections.com/portland/iiif/f2b6c8cb-1ee8-44e0-9ee4-82405f7827a4/full/500,500/0/default.jpg","@type":"dctypes:Image","height":500,"width":500}},{"@id":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_2","@type":"sc:Canvas","label":"High-gain lateral pnp bipolar transistors made using focused ion-3","height":1648,"width":1099,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://iiif.quartexcollections.com/portland/iiif/d8f85553-6142-4f8b-9831-55bfaf8ad876/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://iiif.quartexcollections.com/portland/iiif/d8f85553-6142-4f8b-9831-55bfaf8ad876","profile":"http://iiif.io/api/image/2/level2.json"},"height":1648,"width":1099},"on":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_2","metadata":[]}],"thumbnail":{"@id":"https://iiif.quartexcollections.com/portland/iiif/d8f85553-6142-4f8b-9831-55bfaf8ad876/full/500,500/0/default.jpg","@type":"dctypes:Image","height":500,"width":500}},{"@id":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_3","@type":"sc:Canvas","label":"High-gain lateral pnp bipolar transistors made using focused ion-4","height":1647,"width":1139,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://iiif.quartexcollections.com/portland/iiif/a4233079-8dd3-4c8a-bc8a-a774309aabbc/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://iiif.quartexcollections.com/portland/iiif/a4233079-8dd3-4c8a-bc8a-a774309aabbc","profile":"http://iiif.io/api/image/2/level2.json"},"height":1647,"width":1139},"on":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_3","metadata":[]}],"thumbnail":{"@id":"https://iiif.quartexcollections.com/portland/iiif/a4233079-8dd3-4c8a-bc8a-a774309aabbc/full/500,500/0/default.jpg","@type":"dctypes:Image","height":500,"width":500}},{"@id":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_4","@type":"sc:Canvas","label":"High-gain lateral pnp bipolar transistors made using focused ion-5","height":1644,"width":1127,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://iiif.quartexcollections.com/portland/iiif/1d3d7af5-a527-4272-9930-97f87f7ad275/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://iiif.quartexcollections.com/portland/iiif/1d3d7af5-a527-4272-9930-97f87f7ad275","profile":"http://iiif.io/api/image/2/level2.json"},"height":1644,"width":1127},"on":"https://iiif.quartexcollections.com/portland/iiif/f3cf4552-06d4-43eb-9047-436540110c71/canvas/_4","metadata":[]}],"thumbnail":{"@id":"https://iiif.quartexcollections.com/portland/iiif/1d3d7af5-a527-4272-9930-97f87f7ad275/full/500,500/0/default.jpg","@type":"dctypes:Image","height":500,"width":500}}]}],"thumbnail":"https://iiif.quartexcollections.com/portland/iiif/f2b6c8cb-1ee8-44e0-9ee4-82405f7827a4/full/300,300/0/default.jpg","logo":"https://iiif.quartexcollections.com/portland/iiif/logo"}