{"@context":"http://iiif.io/api/presentation/2/context.json","@type":"sc:Manifest","@id":"https://iiif.quartexcollections.com/berry/iiif/f7fd9046-c736-485c-b7be-5ef9d8467937/manifest","label":"SylvieJacob_2025_Poster","metadata":[{"label":"Identifier","value":"SylvieJacob_2025_Poster"},{"label":"Faculty Advisor","value":["Zachary Lindsey"]},{"label":"Presented at","value":["Berry College Symposium on Student Scholarship"]},{"label":"Project Type","value":["Poster"]},{"label":"Research Funding Link","value":"Learn more about <a href=\"https://berry.edu/academics/faculty-resources/undergraduate-research/student-grants\" target=\"_blank\">student grants</a> and <a href=\"https://berry.edu/academics/faculty-resources/undergraduate-research/summer-research\" target=\"_blank\"> summer research. </a>"},{"label":"Research Funding","value":["Richards Undergraduate Research Grant","Summer Undergraduate Research Fellowship"]},{"label":"Author Supplied Keywords","value":"Semiconductor;Gallium Arsenide; Indium Antimonide;Electrochemistry;Aqueous Solution"},{"label":"Author","value":["Jacob D. Sylvie"]},{"label":"Department","value":["Physics and Technology"]},{"label":"School","value":["School of Mathematical and Natural Sciences"]},{"label":"Subject","value":["Semiconductors","Electrochemistry"]},{"label":"Access Restrictions","value":["immediate unrestricted access"]},{"label":"Rightsholder","value":["Jacob D. Sylvie"]},{"label":"Rights Link","value":"<a href=\"https://rightsstatements.org/page/InC/1.0/?language=en\" target=\"_blank\"> In Copyright</a>"},{"label":"Rights","value":["In Copyright"]},{"label":"Decade","value":["2020s"]},{"label":"Title","value":"Electrochemical Codeposition of InSb on GaAs Substrates"},{"label":"Creator","value":["Jacob D. Sylvie"]},{"label":"Date (Filter)","value":"D:08 M:04 Y:2025"},{"label":"Date","value":"April 08 2025"},{"label":"Description","value":"InSb is a binary III-V semiconductor with particularly interesting bulk material properties,\nsuch as a narrow direct bandgap energy and high room temperature electron mobility,\nthat allow for its use in device applications such as thermophotovoltaics, infrared detectors,\nand high frequency electronics. Electrochemical deposition avoids the toxic gaseous\nprecursors and extreme conditions associated with growth techniques commonly used for\nInSb.\nOur group has previously investigated electrochemical deposition of InSb on GaAs substrates\nusing antimony (III) oxide precursors complexed with citrate ions, which presented\nsome difficulties. Due to the low solubility of antimony (III) oxide, ionic availability at the\nworking electrode was mismatched between In3+ ions from the highly soluble InCl3 precursor\nand Sb ions. This prevented the growth of high quality InSb films and caused the deposited\ncrystallites to display properties dissimilar from those of the bulk InSb material. In this\nstudy, we investigate the effects of the more soluble SbCl3 precursor on the quality of deposited\nInSb. Furthermore, we examine the effects of varying temperature and pH on the\nreduction potentials of In and Sb ions in order to produce high quality InSb deposits."},{"label":"Format","value":["application/pdf"]},{"label":"Language (DLG)","value":["eng"]},{"label":"Publisher","value":["Berry College"]},{"label":"Medium","value":["posters"]},{"label":"Extent","value":"48 x 36 inch poster"},{"label":"Holding Institution","value":["Berry College"]},{"label":"Type","value":["Text"]},{"label":"Language","value":["English"]},{"label":"Major","value":["Physics"]}],"description":"Electrochemical Codeposition of InSb on GaAs Substrates","sequences":[{"@type":"sc:Sequence","canvases":[{"@id":"https://iiif.quartexcollections.com/berry/iiif/f7fd9046-c736-485c-b7be-5ef9d8467937/canvas/_1","@type":"sc:Canvas","label":"SylvieJacob_2025_Poster-1","height":5100,"width":6901,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://iiif.quartexcollections.com/berry/iiif/cc2b5de2-baf4-4a43-80ac-36768b403f45/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://iiif.quartexcollections.com/berry/iiif/cc2b5de2-baf4-4a43-80ac-36768b403f45","profile":"http://iiif.io/api/image/2/level2.json","tiles":[{"width":2048,"scaleFactors":[1,2,4]}]},"height":5100,"width":6901},"on":"https://iiif.quartexcollections.com/berry/iiif/f7fd9046-c736-485c-b7be-5ef9d8467937/canvas/_1","metadata":[]}],"thumbnail":{"@id":"https://iiif.quartexcollections.com/berry/iiif/cc2b5de2-baf4-4a43-80ac-36768b403f45/full/500,500/0/default.jpg","@type":"dctypes:Image","height":500,"width":500}}]}],"thumbnail":"https://iiif.quartexcollections.com/berry/iiif/cc2b5de2-baf4-4a43-80ac-36768b403f45/full/300,300/0/default.jpg","logo":"https://iiif.quartexcollections.com/berry/iiif/logo"}